مؤتمر
Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress
| العنوان: | Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress |
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| المؤلفون: | Stein, S. R., Kim, J., Das, S., Lichtenwalner, D. J., Ryu, S. |
| المصدر: | 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-5 Apr, 2024 |
| Relation: | 2024 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9798350369762 |
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| تدمد: | 19381891 |
| DOI: | 10.1109/IRPS48228.2024.10529394 |