Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method

التفاصيل البيبلوغرافية
العنوان:	Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method
المؤلفون:	Steinmann, Philipp, Lichtenwalner, Daniel J., Stein, Shane, Park, Jae-Hyung, Das, Suman, Ryu, Sei-Hyung
المصدر:	2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :P58.SiC-1-P58.SiC-4 Apr, 2024
Relation:	2024 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات:	IEEE Xplore Digital Library