Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology

التفاصيل البيبلوغرافية
العنوان: Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology
المؤلفون: Lee, S., Lee, N-H, Kim, G-J, Ahn, J., Kim, IH., Ha, S., Rhee, S., Bae, GH, Lee, KW, Lee, YS, Ko, SB., Pae, S.
المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :P69.TX-1-P69.TX-4 Apr, 2024
Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350369762
تدمد:19381891
DOI:10.1109/IRPS48228.2024.10529478