PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors

التفاصيل البيبلوغرافية
العنوان: PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors
المؤلفون: Joy, Soumitra, Joshi, Kaustubh, Zubair, Ahmad, Bader, Samuel, Peck, Jason, Beumer, Michael, Koirala, Pratik, Radosavljevic, Marko, Vora, Heli, Meric, Inanc, Then, Han Wui
المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :6B.1-1-6B.1-6 Apr, 2024
Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350369762
تدمد:19381891
DOI:10.1109/IRPS48228.2024.10529481