New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric Fet

التفاصيل البيبلوغرافية
العنوان: New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric Fet
المؤلفون: Su, Chang, Fu, Zhiyuan, Xu, Shaodi, Huang, Ru, Huang, Qianqian
المصدر: 2024 Conference of Science and Technology for Integrated Circuits (CSTIC) Science and Technology for Integrated Circuits (CSTIC), 2024 Conference of. :1-3 Mar, 2024
Relation: 2024 Conference of Science and Technology for Integrated Circuits (CSTIC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350362190
DOI:10.1109/CSTIC61820.2024.10531822