Temperature Response and Power Dissipation in GaN HEMT on Diamond Substrate

التفاصيل البيبلوغرافية
العنوان: Temperature Response and Power Dissipation in GaN HEMT on Diamond Substrate
المؤلفون: Jaman, Imdad Ahmed, Karim, Tofayel, Rahman, Md. Asifur, Faruk Azad, Md. Omar, Jarndal, Anwar, Alim, Mohammad Abdul
المصدر: 2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT) Electrical Engineering and Information & Communication Technology (ICEEICT), 2024 6th International Conference on. :533-537 May, 2024
Relation: 2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350385779
تدمد:27695700
DOI:10.1109/ICEEICT62016.2024.10534401