دورية أكاديمية
TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs
| العنوان: | TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs |
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| المؤلفون: | Zhang, G., Zhao, S., Wang, Z., Song, X., Liu, S., Sun, X., Yu, L., You, S., Liu, Z., Hao, Y., Zhang, J. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(7):4119-4124 Jul, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2024.3403085 |