دورية أكاديمية
Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization
| العنوان: | Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization |
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| المؤلفون: | Gong, H., Zhou, F., Xiao, M., Yang, Z., Ren, F., Gu, S., Lu, H., Zhang, R., Zhang, Y., Ye, J. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(8):1421-1424 Aug, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2024.3410839 |