دورية أكاديمية
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
| العنوان: | Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band |
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| المؤلفون: | Pena, R.A., Orfao, B., Iniguez-de-la-Torre, I., Paz, G., Daher, M.A., Roelens, Y., Zaknoune, M., Mateos, J., Gonzalez, T., Vasallo, B.G., Perez, S. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4524-4529 Aug, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2024.3409202 |