دورية أكاديمية
Study of Endurance Performance of SiO2 Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO2 Ferroelectric Layer
| العنوان: | Study of Endurance Performance of SiO2 Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO2 Ferroelectric Layer |
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| المؤلفون: | Agarwal, A., Walke, A.M., Ronchi, N., Kao, K., Van Houdt, J. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4619-4625 Aug, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2024.3409204 |