Establishment of Degradation Model and Transfer Model for P-channel Power MOSFETs Under Negative Bias Temperature Stress

التفاصيل البيبلوغرافية
العنوان: Establishment of Degradation Model and Transfer Model for P-channel Power MOSFETs Under Negative Bias Temperature Stress
المؤلفون: Chen, Cen, Wang, Haodong, Yin, Haonan, Zheng, Wei, Zhai, Guofu
المصدر: 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia), 2024 IEEE 10th International. :4280-4284 May, 2024
Relation: 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350351330
DOI:10.1109/IPEMC-ECCEAsia60879.2024.10567064