Novel Grid-Gate 16V-nLDMOS with a Low Specific On-Resistance of 4.7mΩ.mm2Based on A Standard 0.18μm BCD Platform

التفاصيل البيبلوغرافية
العنوان:	Novel Grid-Gate 16V-nLDMOS with a Low Specific On-Resistance of 4.7mΩ.mm2Based on A Standard 0.18μm BCD Platform
المؤلفون:	Wang, Jiawei, Qiao, Ming, Ma, Dingxiang, Gao, Yue, Zhang, Bo
المصدر:	2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :438-441 Jun, 2024
Relation:	2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library