التفاصيل البيبلوغرافية
| العنوان: |
Development of Vertical-Channel Fin-SiC MOSFET for 3.3 kV Applications |
| المؤلفون: |
Suematsu, Tomoka, Suto, Takeru, Mori, Yuki, Shimizu, Haruka, Shima, Akio, Tanaka, Yasunori |
| المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :1-4 Jun, 2024 |
| Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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