التفاصيل البيبلوغرافية
العنوان: |
900V Normally-OFF GaN-on-Si Transistors Achieved by Substrate Potential Modulation (SPM) |
المؤلفون: |
Li, Bruce, Shi, Carol, Dong, Brad, Yang, Simon, Tang, Gaofei |
المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :156-159 Jun, 2024 |
Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
قاعدة البيانات: |
IEEE Xplore Digital Library |