900V Normally-OFF GaN-on-Si Transistors Achieved by Substrate Potential Modulation (SPM)

التفاصيل البيبلوغرافية
العنوان: 900V Normally-OFF GaN-on-Si Transistors Achieved by Substrate Potential Modulation (SPM)
المؤلفون: Li, Bruce, Shi, Carol, Dong, Brad, Yang, Simon, Tang, Gaofei
المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :156-159 Jun, 2024
Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350394825
تدمد:19460201
DOI:10.1109/ISPSD59661.2024.10579572