Heteroepitaxial $\epsilon-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFETs on a 4-inch Sapphire Substrate with a Power Figure of Merit of 0.29 $\text{GW}/\text{cm}^{2}$

التفاصيل البيبلوغرافية
العنوان:	Heteroepitaxial $\epsilon-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFETs on a 4-inch Sapphire Substrate with a Power Figure of Merit of 0.29 $\text{GW}/\text{cm}^{2}$
المؤلفون:	Zeng, Deke, Zhu, Shengheng, Luo, Tiecheng, Chen, Weiqu, Chen, Zimin, Pei, Yanli, Wang, Gang, Lu, Xing
المصدر:	2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :192-195 Jun, 2024
Relation:	2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library