مؤتمر
Heteroepitaxial $\epsilon-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFETs on a 4-inch Sapphire Substrate with a Power Figure of Merit of 0.29 $\text{GW}/\text{cm}^{2}$
العنوان: | Heteroepitaxial $\epsilon-\text{Ga}_{2}\mathrm{O}_{3}$ MOSFETs on a 4-inch Sapphire Substrate with a Power Figure of Merit of 0.29 $\text{GW}/\text{cm}^{2}$ |
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المؤلفون: | Zeng, Deke, Zhu, Shengheng, Luo, Tiecheng, Chen, Weiqu, Chen, Zimin, Pei, Yanli, Wang, Gang, Lu, Xing |
المصدر: | 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :192-195 Jun, 2024 |
Relation: | 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
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