التفاصيل البيبلوغرافية
| العنوان: |
Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress Under HTRB and HTGB Test |
| المؤلفون: |
Ren, Min, Liang, Shiqi, Zhou, Tong, Gu, Hang, Gao, Wei, Pi, Meng, Tang, Yuting, Liu, Zhihai, Li, Zehong, Guo, Xinkai, Dai, Maozhou, Zhang, Bo |
| المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :208-211 Jun, 2024 |
| Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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