Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs

التفاصيل البيبلوغرافية
العنوان: Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs
المؤلفون: Yang, Xin, Song, Qihao, Zhang, Ruizhe, Wang, Bixuan, Pidaparthi, Subhash, Walker, Andy, Drowley, Cliff, Zhang, Yuhao
المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :283-286 Jun, 2024
Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350394825
تدمد:19460201
DOI:10.1109/ISPSD59661.2024.10579632