التفاصيل البيبلوغرافية
| العنوان: |
Investigation of Total Ionizing Dose Radiation Effects on SiC MOSFETs by Modulating the Nitrogen Content in Gate Oxide Processing |
| المؤلفون: |
Luo, Maojiu, Zhang, Yourun, Chen, Hang, Zhang, Bo |
| المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :96-99 Jun, 2024 |
| Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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