مؤتمر
600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET)
العنوان: | 600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET) |
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المؤلفون: | Jang, Seung Yup, Mancini, Stephen A., Sung, Woongje |
المصدر: | 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :335-338 Jun, 2024 |
Relation: | 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9798350394825 |
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تدمد: | 19460201 |
DOI: | 10.1109/ISPSD59661.2024.10579651 |