600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET)

التفاصيل البيبلوغرافية
العنوان: 600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET)
المؤلفون: Jang, Seung Yup, Mancini, Stephen A., Sung, Woongje
المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :335-338 Jun, 2024
Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350394825
تدمد:19460201
DOI:10.1109/ISPSD59661.2024.10579651