التفاصيل البيبلوغرافية
| العنوان: |
200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability |
| المؤلفون: |
Huang, Zhen-Hong, Chang, Chia-Hao, Lo, Ting-Chun, Lee, Yu-Ting, Lu, Chih-Hung, Wang, Hung-En, Tsai, Yi-He, Cheng, Ying-Chi, Huang, Yu-Jen, Chou, Chin-Wen, Wu, Tian-Li |
| المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :319-322 Jun, 2024 |
| Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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