Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs

التفاصيل البيبلوغرافية
العنوان: Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs
المؤلفون: Nishiwaki, Tatsuya, Kumabe, Yu, Miyajima, Naoya, Kawamura, Keiko, Kobayashi, Kenya
المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :355-358 Jun, 2024
Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350394825
تدمد:19460201
DOI:10.1109/ISPSD59661.2024.10579695