دورية أكاديمية
Drain-Leakage Degradation During Single-Event Burnout Experiments in N-Channel Power VDMOS Transistors
| العنوان: | Drain-Leakage Degradation During Single-Event Burnout Experiments in N-Channel Power VDMOS Transistors |
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| المؤلفون: | Liu, F., Liu, Z., Wu, L., Xu, X., Liu, S., Jin, X., Yang, J., Li, X. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4906-4913 Aug, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2024.3418302 |