مؤتمر
A Gate-Oxide Degradation Monitoring Method of SiC MOSFETs Based on Threshold Voltage Hysteresis
| العنوان: | A Gate-Oxide Degradation Monitoring Method of SiC MOSFETs Based on Threshold Voltage Hysteresis |
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| المؤلفون: | Zhou, Xinghao, Sun, Pengju, Peng, Guoxiu, Ma, Xing |
| المصدر: | 2024 IEEE 7th International Electrical and Energy Conference (CIEEC) Electrical and Energy Conference (CIEEC), 2024 IEEE 7th International. :2809-2812 May, 2024 |
| Relation: | 2024 IEEE 7th International Electrical and Energy Conference (CIEEC） |
| قاعدة البيانات: | IEEE Xplore Digital Library |
| ردمك: | 9798350359558 |
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| DOI: | 10.1109/CIEEC60922.2024.10583048 |