مؤتمر
A 266.7 TOPS/W Computing-in Memory Using Single-Ended 6T 4-kb SRAM in 16-nm FinFET CMOS Process
| العنوان: | A 266.7 TOPS/W Computing-in Memory Using Single-Ended 6T 4-kb SRAM in 16-nm FinFET CMOS Process |
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| المؤلفون: | Lo, Cheng-Yao, Santos Tolentino, Lean Karlo, Ke, Jhih-Ying, Walling, Jeffrey S., Yi, Yang, Wang, Chua-Chin |
| المصدر: | 2024 IEEE 6th International Conference on AI Circuits and Systems (AICAS) AI Circuits and Systems (AICAS), 2024 IEEE 6th International Conference on. :90-94 Apr, 2024 |
| Relation: | 2024 IEEE 6th International Conference on AI Circuits and Systems (AICAS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
| ردمك: | 9798350383638 9798350383621 |
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| تدمد: | 28349857 |
| DOI: | 10.1109/AICAS59952.2024.10595553 |