A Broadband 22nm FDSOI D-Band Power Amplifier with Dynamic Back Gate Bias Gain-Linearization Achieving 9.6% PAE at 8.7 dBm OPldB and 3.7% at 6 dB Back-off

التفاصيل البيبلوغرافية
العنوان: A Broadband 22nm FDSOI D-Band Power Amplifier with Dynamic Back Gate Bias Gain-Linearization Achieving 9.6% PAE at 8.7 dBm OPldB and 3.7% at 6 dB Back-off
المؤلفون: Engelmann, Andre, Scheller, Kai, Probst, Florian, Koch, Manuel, Weigel, Robert, Fischer, Georg
المصدر: 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024 Microwave Symposium - IMS 2024, 2024 IEEE/MTT-S International. :1077-1080 Jun, 2024
Relation: 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350375046
تدمد:25767216
DOI:10.1109/IMS40175.2024.10600283