A 17 dBm OP1 dB F-Band GaN-on-SiC HEMT LNA with a Monolithic Substrate-Integrated Waveguide Filter

التفاصيل البيبلوغرافية
العنوان: A 17 dBm OP1 dB F-Band GaN-on-SiC HEMT LNA with a Monolithic Substrate-Integrated Waveguide Filter
المؤلفون: Thome, Fabian, Schwantuschke, Dirk, Bruckner, Peter, Wang, Xiaopeng, Hwang, James C. M., Quay, Rudiger
المصدر: 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024 Microwave Symposium - IMS 2024, 2024 IEEE/MTT-S International. :314-317 Jun, 2024
Relation: 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350375046
تدمد:25767216
DOI:10.1109/IMS40175.2024.10600353