W-Band Low-Noise-Amplifier MMICs in InGaAs HEMT Technologies on Gallium-Arsenide and Silicon Substrates

التفاصيل البيبلوغرافية
العنوان: W-Band Low-Noise-Amplifier MMICs in InGaAs HEMT Technologies on Gallium-Arsenide and Silicon Substrates
المؤلفون: Heinz, Felix, Leuther, Arnulf, Thome, Fabian
المصدر: 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024 Microwave Symposium - IMS 2024, 2024 IEEE/MTT-S International. :337-340 Jun, 2024
Relation: 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350375046
تدمد:25767216
DOI:10.1109/IMS40175.2024.10600410