مؤتمر
A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance
| العنوان: | A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance |
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| المؤلفون: | Chen, Wei, Yuan, Jun, Guo, Fei, Cheng, Zhijie, Wu, Yangyang, Wang, Kuan, Xin, Guoqing, Wang, Zhiqiang |
| المصدر: | 2024 IEEE 2nd International Conference on Power Science and Technology (ICPST) Power Science and Technology (ICPST), 2024 IEEE 2nd International Conference on. :99-103 May, 2024 |
| Relation: | 2024 IEEE 2nd International Conference on Power Science and Technology (ICPST) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
| ردمك: | 9798350349030 9798350349023 |
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| DOI: | 10.1109/ICPST61417.2024.10602073 |