مؤتمر
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz
| العنوان: | Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz |
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| المؤلفون: | Sinnwell, Matthias, Dammann, Michael, Driad, Rachid, Leone, Stefano, Mikulla, Michael, Quay, Rudiger |
| المصدر: | 2024 Device Research Conference (DRC) Device Research Conference (DRC), 2024. :1-2 Jun, 2024 |
| Relation: | 2024 Device Research Conference (DRC) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9798350373738 |
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| تدمد: | 26406853 |
| DOI: | 10.1109/DRC61706.2024.10605504 |