مؤتمر
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz
العنوان: | Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz |
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المؤلفون: | Sinnwell, Matthias, Dammann, Michael, Driad, Rachid, Leone, Stefano, Mikulla, Michael, Quay, Rudiger |
المصدر: | 2024 Device Research Conference (DRC) Device Research Conference (DRC), 2024. :1-2 Jun, 2024 |
Relation: | 2024 Device Research Conference (DRC) |
قاعدة البيانات: | IEEE Xplore Digital Library |
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