دورية أكاديمية
Structural and Electrical Characteristics of GaN HEMTs With In Situ SiNx Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas
| العنوان: | Structural and Electrical Characteristics of GaN HEMTs With In Situ SiNx Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas |
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| المؤلفون: | Huang, Z., Zhang, H., Chen, Y., Liang, F., Yang, L., Liang, K., Xing, Z., Wang, H., Zhang, M., Li, J., Ye, Y., Guo, S., Sun, H. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4590-4595 Aug, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2024.3420260 |