دورية أكاديمية
Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineering
| العنوان: | Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineering |
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| المؤلفون: | Song, Y.S., Kim, H., Hyun Kim, J. |
| المصدر: | IEEE Access Access, IEEE. 12:105878-105886 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 21693536 |
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| DOI: | 10.1109/ACCESS.2024.3435691 |