Highly strained InGaAs/GaAs quantum wells obtained by selective epitaxy

التفاصيل البيبلوغرافية
العنوان: Highly strained InGaAs/GaAs quantum wells obtained by selective epitaxy
المؤلفون: Kondratov, M.I., Shamakhov, V.V., Nikolaev, D.N., Grishin, A.E., Slipchenko, S.O., Pikhtin, N.A.
المصدر: 2024 International Conference Laser Optics (ICLO) Laser Optics (ICLO), 2024 International Conference. :123-123 Jul, 2024
Relation: 2024 International Conference Laser Optics (ICLO)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350390674
تدمد:26425580
DOI:10.1109/ICLO59702.2024.10624577