Chemical beveling of Si/SiGe structures for structure and material analysis by Raman spectroscopy

التفاصيل البيبلوغرافية
العنوان: Chemical beveling of Si/SiGe structures for structure and material analysis by Raman spectroscopy
المؤلفون: Srnanck, R., Kinder, R., Donoval, D., Peternai, L., Novotny, I., Geurts, J., McPhail, D.S., Chater, R., Nemcsics, A.
المصدر: The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Advanced semiconductor devices and microsystems Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on. :195-198 2002
Relation: Proceedings of ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078037276X
9780780372764
DOI:10.1109/ASDAM.2002.1088505