دورية أكاديمية
A study of stress-induced p/sup +//n salicided junction leakage failure and optimized process conditions for sub-0.15-/spl mu/m CMOS technology
| العنوان: | A study of stress-induced p/sup +//n salicided junction leakage failure and optimized process conditions for sub-0.15-/spl mu/m CMOS technology |
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| المؤلفون: | Joo-Hyoung Lee, Sung-Hyung Park, Key-Min Lee, Ki-Seok Youn, Young-Jin Park, Chel-Jong Choi, Tae-Yeon Seong, Hi-Deok Lee |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 49(11):1985-1992 Nov, 2002 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2002.804704 |