دورية أكاديمية
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
العنوان: | The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method |
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المؤلفون: | Harkonen, J., Tuominen, E., Tuovinen, E., Lassila-Perini, K., Mehtala, P., Nummela, S., Nysten, J., Heikkila, P., Ovchinnikov, V., Palokangas, M., Yli-Koski, M., Palmu, L., Kallijarvi, S., Alanko, T., Laitinen, P., Pirojenko, A., Riihimaki, I., Tiourine, G., Virtanen, A. |
المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 49(6):2910-2913 Dec, 2002 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189499 15581578 |
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DOI: | 10.1109/TNS.2002.805345 |