دورية أكاديمية

The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

التفاصيل البيبلوغرافية
العنوان: The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
المؤلفون: Harkonen, J., Tuominen, E., Tuovinen, E., Lassila-Perini, K., Mehtala, P., Nummela, S., Nysten, J., Heikkila, P., Ovchinnikov, V., Palokangas, M., Yli-Koski, M., Palmu, L., Kallijarvi, S., Alanko, T., Laitinen, P., Pirojenko, A., Riihimaki, I., Tiourine, G., Virtanen, A.
المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 49(6):2910-2913 Dec, 2002
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189499
15581578
DOI:10.1109/TNS.2002.805345