A 10,000 gate bipolar VLSI masterslice utilizing four levels of metal

التفاصيل البيبلوغرافية
العنوان: A 10,000 gate bipolar VLSI masterslice utilizing four levels of metal
المؤلفون: Brenner, S., Bartush, T., Swietek, D., Banker, D., Crispi, F., Delotto, D., Merrill, D., Norsworthy, J., Mei-Nien Shen, Waggoner, C.
المصدر: 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International. XXVI:152-153 1983
Relation: 1983 IEEE International Solid-State Circuits Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
DOI:10.1109/ISSCC.1983.1156480