مؤتمر
Nickel silicide metal gate FDSOI devices with improved gate oxide leakage
| العنوان: | Nickel silicide metal gate FDSOI devices with improved gate oxide leakage |
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| المؤلفون: | Krivokapic, Z., Maszara, W., Achutan, K., King, P., Gray, J., Sidorow, M., Zhao, E., Zhang, J., Chan, J., Marathe, A., Lin, M.-R. |
| المصدر: | Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :271-274 2002 |
| Relation: | IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780374622 9780780374621 |
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| DOI: | 10.1109/IEDM.2002.1175830 |