مؤتمر
Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates
| العنوان: | Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates |
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| المؤلفون: | Maszara, W.P., Krivokapic, Z., King, P., Goo, J.-S., Lin, M.-R. |
| المصدر: | Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :367-370 2002 |
| Relation: | IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780374622 9780780374621 |
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| DOI: | 10.1109/IEDM.2002.1175854 |