A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate

التفاصيل البيبلوغرافية
العنوان: A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate
المؤلفون: Chi On Chui, Hyoungsub Kim, Chi, D., Triplett, B.B., McIntyre, P.C., Saraswat, K.C.
المصدر: Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :437-440 2002
Relation: IEEE International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780374622
9780780374621
DOI:10.1109/IEDM.2002.1175872