مؤتمر
SiGe HBTs with cut-off frequency of 350 GHz
العنوان: | SiGe HBTs with cut-off frequency of 350 GHz |
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المؤلفون: | Rieh, J.-S., Jagannathan, B., Chen, H., Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S.-J., Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K., Volant, R., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S. |
المصدر: | Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :771-774 2002 |
Relation: | IEEE International Electron Devices Meeting |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780374622 9780780374621 |
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DOI: | 10.1109/IEDM.2002.1175952 |