SiGe HBTs with cut-off frequency of 350 GHz

التفاصيل البيبلوغرافية
العنوان: SiGe HBTs with cut-off frequency of 350 GHz
المؤلفون: Rieh, J.-S., Jagannathan, B., Chen, H., Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S.-J., Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K., Volant, R., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.
المصدر: Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :771-774 2002
Relation: IEEE International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780374622
9780780374621
DOI:10.1109/IEDM.2002.1175952