دورية أكاديمية
A novel double offset-implanted source/drain technology for reduction of gate-induced drain-leakage with 0.12-μm single-gate low-power SRAM device
| العنوان: | A novel double offset-implanted source/drain technology for reduction of gate-induced drain-leakage with 0.12-μm single-gate low-power SRAM device |
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| المؤلفون: | Sang-Hun Seo, Won-Suk Yang, Han-Sin Lee, Moo-Sung Kim, Kwang-Ok Koh, Seung-Hyun Park, Kyeong-Tae Kim |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 23(12):719-721 Dec, 2002 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2002.805769 |