مؤتمر
The effect of base dopant out-diffusion and undoped SiGe or Si spacer layers at both sides of the base on the characteristics of microwave Si/SiGe/Si HBT's
| العنوان: | The effect of base dopant out-diffusion and undoped SiGe or Si spacer layers at both sides of the base on the characteristics of microwave Si/SiGe/Si HBT's |
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| المؤلفون: | Zhang Wan-rong, Liu Hai-jiang, Wang Li-xin, Wang Dong, Li Zhi-guo, Chen Yao-hai, Chen Jianxin, Shen Guang-di |
| المصدر: | 2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. Microwave and millimeter wave technology Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on. :66-69 2002 |
| Relation: | Proceedings of 3rd International Conference on Microwave and Millimeter Wave Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078037486X 9780780374867 |
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| DOI: | 10.1109/ICMMT.2002.1187636 |