دورية أكاديمية
A 22-nm damascene-gate MOSFET fabrication with 0.9-nm EOT and local channel implantation
| العنوان: | A 22-nm damascene-gate MOSFET fabrication with 0.9-nm EOT and local channel implantation |
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| المؤلفون: | Jeong-Dong Choe, Chang-Sub Lee, Sung-Ho Kim, Sung-Min Kim, Shin-Ae Lee, Ju-Won Lee, Shin, Y.-G., Donggun Park, Kinam Kim |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 24(3):195-197 Mar, 2003 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2003.811401 |