Sensing mechanisms of high temperature silicon carbide field-effect devices

التفاصيل البيبلوغرافية
العنوان: Sensing mechanisms of high temperature silicon carbide field-effect devices
المؤلفون: Tobias, P., Golding, B., Ghosh, R.N.
المصدر: TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Solid-state sensors, actuators and microsystems TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003. 1:416-419 vol.1 2003
Relation: IEEE International Solid-State Sensors and Actuators Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780377311
9780780377318
DOI:10.1109/SENSOR.2003.1215342