Thermal modeling and measurement of AlGaN/GaN FETs built on sapphire and SiC substrates

التفاصيل البيبلوغرافية
العنوان: Thermal modeling and measurement of AlGaN/GaN FETs built on sapphire and SiC substrates
المؤلفون: Jeong Park, Kakovitch, D., Moo whan Shin, Chin C. Lee
المصدر: 53rd Electronic Components and Technology Conference, 2003. Proceedings. Electronic Components and Technology Conference, 2003. Proceedings. 53rd. :438-442 2003
Relation: 53rd Electronic Components and Technology Conference, 2003. Proceedings.
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780377915
9780780377912
تدمد:05695503
DOI:10.1109/ECTC.2003.1216314