Silicon carbide power MOSFET model and parameter extraction sequence

التفاصيل البيبلوغرافية
العنوان: Silicon carbide power MOSFET model and parameter extraction sequence
المؤلفون: McNutt, T., Hefner, A., Mantooth, A., Berning, D., Sei-Hyung Ryu
المصدر: IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03. Power electronics specialists conference Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual. 1:217-226 vol.1 2003
Relation: PESC 2003 - Power Electronics Specialist Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780377540
9780780377547
تدمد:02759306
DOI:10.1109/PESC.2003.1218298