TiN/HfO/sub 2//TiN capacitor technology applicable to 70 nm generation DRAMs

التفاصيل البيبلوغرافية
العنوان: TiN/HfO/sub 2//TiN capacitor technology applicable to 70 nm generation DRAMs
المؤلفون: Se-Hoon Oh, Jeong-Hee Chung, Jae-Hyoung Choi, Cha-Young Yoo, Young Sun Kim, Sung Tae Kim, U-In Chung, Joo Tae Moon
المصدر: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) VLSI technology VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on. :73-74 2003
Relation: 2003 Symposium on VLSI Technology. Digest of Technical Papers
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:489114033X
9784891140335
DOI:10.1109/VLSIT.2003.1221092