A 1.8 V 128 Mb 125 MHz multi-level cell flash memory with flexible read while write

التفاصيل البيبلوغرافية
العنوان:	A 1.8 V 128 Mb 125 MHz multi-level cell flash memory with flexible read while write
المؤلفون:	Elmhurst, D., Bains, R., Bressie, T., Bueb, C., Carrieri, E., Chauhan, B., Chrisman, N., Dayley, M., De Luna, R., Fan, K., Goldman, M., Govindu, P., Huq, A., Khandaker, M., Kreifels, J., Krishnamachari, S., Lavapie, P., Loe, K., Ly, T., Marvin, F., Melcher, R., Monasa, S., Nguyen, Q., Pathak, B., Proescholdt, A., Rahman, T., Srinivasan, B., Sundaram, R., Walimbe, P., Ward, D., Zeng, D.R., Zhang, H.
المصدر:	2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. Solid-state circuits Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International. :286-287 vol.1 2003
Relation:	Proceedings of IEEE International Solid-State Circuits Conference
قاعدة البيانات:	IEEE Xplore Digital Library